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| NTGS3433T1 MOSFET -3.3 Amps, -12 Volts P-Channel TSOP-6 Features http://onsemi.com V(BR)DSS -12 V RDS(on) TYP 75 mW @ -4.5 V P-Channel 1256 DRAIN ID Max -3.3 A * * * * Ultra Low RDS(on) Higher Efficiency Extending Battery Life Miniature TSOP-6 Surface Mount Package Pb-Free Package is Available Applications * Power Management in Portable and Battery-Powered Products, i.e.: Cellular and Cordless Telephones, and PCMCIA Cards MAXIMUM RATINGS (TJ = 25C unless otherwise noted.) Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Thermal Resistance Junction-to-Ambient (Note 1) Total Power Dissipation @ TA = 25C Drain Current - Continuous @ TA = 25C - Pulsed Drain Current (Tp t 10 mS) Maximum Operating Power Dissipation Maximum Operating Drain Current Thermal Resistance Junction-to-Ambient (Note 2) Total Power Dissipation @ TA = 25C Drain Current - Continuous @ TA = 25C - Pulsed Drain Current (Tp t 10 mS) Maximum Operating Power Dissipation Maximum Operating Drain Current Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes for 10 Seconds Symbol VDSS VGS RqJA Pd IDM Pd ID ID Value -12 "8.0 62.5 2.0 -3.3 -20 1.0 -2.35 Unit Volts Volts C/W Watts Amps Amps Watts Amps 1 TSOP-6 CASE 318G STYLE 1 GATE 3 4 SOURCE MARKING DIAGRAM & PIN ASSIGNMENT Drain Drain Source 654 433 M G G 123 Drain Drain Gate RqJA Pd ID IDM Pd ID TJ, Tstg TL 128 1.0 -2.35 -14 0.5 -1.65 -55 to 150 260 C/W Watts Amps Amps Watts Amps C C M 433 G = Specific Device Code = Date Code* = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Mounted onto a 2 square FR-4 board (1 in sq, 2 oz. Cu 0.06 thick single sided), t t 5.0 seconds. 2. Mounted onto a 2 square FR-4 board (1 in sq, 2 oz. Cu 0.06 thick single sided), operating to steady state. ORDERING INFORMATION Device NTGS3433T1 NTGS3433T1G Package TSOP-6 TSOP-6 (Pb-Free) Shipping 3000 Tape & Reel 3000 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2006 February, 2006 - Rev. 2 1 Publication Order Number: NTGS3433T1/D NTGS3433T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Notes 3 & 4) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = -10 mA) Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = -8 Vdc, TJ = 25C) (VGS = 0 Vdc, VDS = -8 Vdc, TJ = 70C) Gate-Body Leakage Current (VGS = -8.0 Vdc, VDS = 0 Vdc) Gate-Body Leakage Current (VGS = +8.0 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = -250 mAdc) Static Drain-Source On-State Resistance (VGS = -4.5 Vdc, ID = -3.3 Adc) (VGS = -2.5 Vdc, ID = -2.9 Adc) Forward Transconductance (VDS = -10 Vdc, ID = -3.3 Adc) DYNAMIC CHARACTERISTICS Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Reverse Recovery Time BODY-DRAIN DIODE RATINGS Diode Forward On-Voltage Diode Forward On-Voltage (IS = -1.7 Adc, VGS = 0 Vdc) (IS = -3.3 Adc, VGS = 0 Vdc) VSD VSD - - -0.80 -0.90 -1.5 - Vdc Vdc (IS = -1.7 Adc, dlS/dt = 100 A/ms) (VDD = -10 Vdc, ID = -1.0 Adc, VGS = -4.5 Vdc, Rg = 6.0 W) td(on) tr td(off) tf trr - - - - - 20 20 110 100 30 30 30 120 115 - ns ns (VDS = -5.0 Vdc, VGS = 0 Vdc, f = 1.0 MHz) (VDS = -10 Vdc, VGS = -4.5 Vdc, ID = -3.3 Adc) Qtot Qgs Qgd Ciss Coss Crss - - - - - - 7.0 2.0 3.5 550 450 200 15 - - - - - pF nC VGS(th) RDS(on) -0.50 - - - -0.70 0.055 0.075 7.0 -1.50 0.075 0.095 - Vdc W V(BR)DSS IDSS -12 - - - - - - - - - - -1.0 -5.0 -100 100 Vdc mAdc Symbol Min Typ Max Unit IGSS IGSS nAdc nAdc gFS mhos 3. Indicates Pulse Test: P.W. = 300 msec max, Duty Cycle = 2%. 4. Class 1 ESD rated - Handling precautions to protect against electrostatic discharge are mandatory. http://onsemi.com 2 NTGS3433T1 12 -ID, DRAIN CURRENT (AMPS) 10 8 6 4 TJ = 25C 2 VGS = -1.5 V 0 0 0.25 0.5 0.75 1 1.25 1.5 1.75 VGS = -3 V VGS = -3.5 V VGS = -4 V VGS = -4.5 V VGS = -2 V -ID, DRAIN CURRENT (AMPS) VGS = -5 V VGS = -2.5 V 20 18 16 14 12 10 8 6 4 2 0 0.5 1 1.5 2 2.5 3 3.5 4 TJ = 125C VDS -10 V TJ = -55C TJ = 25C -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0 2 4 6 8 ID = -3.3 A TJ = 25C 0.3 TJ = 25C 0.25 0.2 0.15 0.1 0.05 0 VGS = -2.5 V VGS = -4.5 V 0 2 4 6 8 10 12 14 16 18 20 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) -ID, DRAIN CURRENT (AMPS) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) Figure 3. On-Resistance vs. Gate-to-Source Voltage 1200 ID = -3.3 A VGS = -4.5 V 1000 C, CAPACITANCE (pF) 800 600 400 200 0 Figure 4. On-Resistance vs. Drain Current and Gate Voltage 1.6 1.4 1.2 1 0.8 0.6 -50 VGS = 0 V TJ = 25C Ciss Coss Crss 0 2.5 5 7.5 10 12.5 15 17.5 20 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 3 NTGS3433T1 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 6 5 4 3 2 1 0 0 2 4 6 -IS, SOURCE CURRENT (AMPS) 10 9 8 7 6 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1 1.2 TJ = 25C TJ = 150C VGS = 0 V QT Qgs Qgd TJ = 25C ID = -3.3 A 8 10 Qg, TOTAL GATE CHARGE (nC) -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 7. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE 1 Duty Cycle = 0.5 Figure 8. Diode Forward Voltage vs. Current 0.2 0.1 0.1 0.05 0.02 0.01 0.1 1E-04 1E-03 Single Pulse 1E-02 1E-01 1E+00 1E+01 1E+02 1E+03 SQUARE WAVE PULSE DURATION (sec) Figure 9. Normalized Thermal Transient Impedance, Junction-to-Ambient 20 16 POWER (W) 12 8 4 0 0.01 0.10 1.00 TIME (sec) 10.00 100.00 Figure 10. Single Pulse Power http://onsemi.com 4 NTGS3433T1 PACKAGE DIMENSIONS TSOP-6 CASE 318G-02 ISSUE P D HE 6 1 5 2 4 3 E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0 MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10 - MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0 INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 - MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10 b e c L q 0.05 (0.002) A1 A STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 5 NTGS3433T1/D |
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